Semiconductor device fabrication
MOSFET scaling (process nodes)
020 μm – 1968 010 μm – 1971 006 μm – 1974 003 μm – 1977  1.5 μm – 1981 001 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2024
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
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The 350 nm process refers to the level of MOSFET semiconductor process technology that was reached around the 1993–1996 timeframe, by leading semiconductor companies like Sony, Intel and IBM.

A MOSFET with a 300 nm channel length was fabricated by a research team led by K. Deguchi and Kazuhiko Komatsu at Nippon Telegraph and Telephone (NTT) in 1985.^[1]

Products featuring 350 nm manufacturing process

• Sony introduced a 16 MB SRAM memory chip manufactured with a 350 nm process in 1993.^[2]
• NEC, which introduced a 350 nm 3LI CMOS process in 1994, used it for processors in the Nintendo 64 (N64) game console, released in 1996.
  • NEC VR4300i (1995), the CPU used in the N64.
  • SGI Reality Coprocessor (RCP), the N64's GPU, manufactured by NEC.^[3]
• Intel Pentium (P54CS, 1995), Pentium Pro (1995) and initial Pentium II CPUs (Klamath, 1997).
• AMD K5 (1996) and original AMD K6 (Model 6, 1997) CPUs.
• МЦСТ-R150 (2001).
• Parallax Propeller (2006), 8 core microcontroller.^[4]

References

Preceded by 600 nm

CMOS manufacturing processes

Succeeded by 250 nm